PROJECTED RANGE AND DAMAGE DISTRIBUTIONS IN ION-IMPLANTED AL, SI, AL2O3, AND GAAS

被引：7

作者：

KIDO, Y

KAWAMOTO, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 09期

关键词：

D O I：

10.1063/1.335754

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3377 / 3387

页数：11

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