GLOBAL EXCESS SPONTANEOUS EMISSION FACTOR OF SEMICONDUCTOR-LASERS WITH AXIALLY VARYING CHARACTERISTICS

An expression of the excess spontaneous emission factor of semiconductor lasers having axially varying characteristics has been derived, using a classical treatment for the contribution of spontaneous emission to the laser's noise figure. Although the analysis is focused on semiconductor laser structures, including DFB lasers, the expression obtained can be applied with minor changes to other standing-wave laser geometries. This global excess spontaneous emission factor, accounting for transverse as well as longitudinal effects, is relevant even for laser structures wherein the longitudinal and lateral field distributions are mutually coupled. In this situation, this factor is not equivalent to the product of the well-known Petermann's excess noise factor and a longitudinal correction factor accounting for outcoupling losses.