OHMIC CONTACTS TO P-TYPE AND N-TYPE GASB

被引：27

作者：

HEINZ, C

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1080/00207218308938720

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：247 / 254

页数：8

共 13 条

[1] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].

BERGER, HH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :507-&

[2] VERY HIGH QUANTUM EFFICIENCY GASB MESA PHOTODETECTORS BETWEEN 1.3 AND 1.6-MU-M [J].

CAPASSO, F ;

PANISH, MB ;

SUMSKI, S ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :165-167

[3]

KRUKOVSKAYA LP, 1974, PRIB TEKH EKSP, V1, P233

[4]

LAW HD, 1979, I PHYS C SER, V45, P420

[5] SCHOTTKY BARRIERS ON COMPOUND SEMICONDUCTORS - ROLE OF ANION [J].

MCCALDIN, JO ;

MCGILL, TC ;

MEAD, CA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :802-806

[6] GASB SCHOTTKY DIODES FOR INFRARED DETECTORS [J].

NAGAO, Y ;

HARIU, T ;

SHIBATA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (04) :407-411

[7] REVIEW OF THEORY AND TECHNOLOGY FOR OHMIC CONTACTS TO GROUP III-V COMPOUND SEMICONDUCTORS [J].

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1975, 18 (06) :541-550

[8] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

SPICER, WE ;

CHYE, PW ;

SKEATH, PR ;

SU, CY ;

LINDAU, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433

[9]

Strazynska H., 1973, Electron Technology, V6, P73

[10] HIGHLY EFFICIENT PGASB-NGA1-XALXSB PHOTO-DIODES [J].

SUKEGAWA, T ;

HIRAGUCHI, T ;

TANAKA, A ;

HAGINO, M .

APPLIED PHYSICS LETTERS, 1978, 32 (06) :376-378

← 1 2 →