CZOCHRALSKI GROWTH OF CRYSTALS - SIMPLE-MODELS FOR GROWTH-RATE AND INTERFACE SHAPE

被引：5

作者：

SRIVASTAVA, RK

RAMACHANDRAN, PA

DUDUKOVIC, MP

机构：

[1] Washington Univ, St. Louis, MO, USA, Washington Univ, St. Louis, MO, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 05期

关键词：

D O I：

10.1149/1.2108696

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

CRYSTALS

引用

页码：1009 / 1014

页数：6

共 8 条

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[5] COMPUTER-SIMULATION AND CONTROLLED GROWTH OF LARGE DIAMETER CZOCHRALSKI SILICON-CRYSTALS [J].

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[7] SIMULATION OF TEMPERATURE DISTRIBUTION IN CRYSTALS GROWN BY CZOCHRALSKI METHOD [J].

RAMACHANDRAN, PA ;

DUDUKOVIC, MP .

JOURNAL OF CRYSTAL GROWTH, 1985, 71 (02) :399-408

[8] INTERFACE SHAPE IN CZOCHRALSKI GROWN CRYSTALS - EFFECT OF CONDUCTION AND RADIATION [J].

SRIVASTAVA, RK ;

RAMACHANDRAN, PA ;

DUDUKOVIC, MP .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :487-504

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