COMPUTER-SIMULATION AND CONTROLLED GROWTH OF LARGE DIAMETER CZOCHRALSKI SILICON-CRYSTALS

被引：22

作者：

KIM, KM

KRAN, A

SMETANA, P

SCHWUTTKE, GH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 05期

关键词：

D O I：

10.1149/1.2119907

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1156 / 1160

页数：5

共 11 条

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[8] CZOCHRALSKI SILICON PULL RATE LIMITS [J].

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