NUMERICAL ANALYSES OF SOLID-LIQUID INTERFACE SHAPES DURING CRYSTAL GROWTH BY CZOCHRALSKI METHOD

被引：49

作者：

KOBAYASHI, N

ARIZUMI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1970年 / 9卷 / 04期

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D O I：

10.1143/JJAP.9.361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：361 / +

页数：1

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共 21 条

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES
ALLEN, FG
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511
[2] SOLID-LIQUID INTERFACE SHAPE DURING CRYSTAL GROWTH BY CZOCHRALSKI METHOD
ARIZUMI, T
KOBAYASHI, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (09) : 1091 - +
[3] BIRD RB, 1960, TRANSPORT PHENOMENA, P82
[4] BIRD RB, 1960, TRANSPORT PHENOMENA, P130
[5] BIRD RB, 1960, TRANSPORT PHENOMENA, P123
[6] Brice J. C., 1968, Journal of Crystal Growth, V2, P395, DOI 10.1016/0022-0248(68)90035-3
[7] THE TEMPERATURE DISTRIBUTION IN PULLED GERMANIUM CRYSTALS DURING GROWTH
BRICE, JC
WHIFFIN, PAC
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 183 - 187
[8] NONMIXING CELLS DUE TO CRUCIBLE ROTATION DURING CZOCHRALSKI CRYSTAL GROWTH
CARRUTHERS, JR
NASSAU, K
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) : 5205 - +
[9] RADIAL SOLUTE SEGREGATION IN CZOCHRALSKI GROWTH
CARRUTHERS, JR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (09) : 959 - +
[10] MORPHOLOGY AND DEFECT CHARACTERISTICS OF VERTICALLY PULLED MGAL2O4 SINGLE CRYSTALS
COCKAYNE, B
CHESSWAS, M
BORN, PJ
FILBY, JD
[J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 236 - &