SOLID-LIQUID INTERFACE SHAPE DURING CRYSTAL GROWTH BY CZOCHRALSKI METHOD

被引：22

作者：

ARIZUMI, T

KOBAYASHI, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 09期

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D O I：

10.1143/JJAP.8.1091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1091 / +

页数：1

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共 18 条

[1] TEMPERATURE DISTRIBUTION IN SILICON INGOTS DURING CRYSTAL GROWTH
AKIYAMA, K
YAMAGUCHI, J
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1899 - &
[2] AKIYAMA K, 1962, ULTRAPURIFICATION SE, P521
[3] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES
ALLEN, FG
[J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511
[4] SOME DEFECTS IN CRYSTALS GROWN FROM THE MELT .1. DEFECTS CAUSED BY THERMAL STRESSES
BILLIG, E
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 235 (1200) : 37 - +
[5] THE SHAPE OF MELT-CRYSTAL INTERFACES DURING FLOAT ZONING OF SILICON
BRAUN, JH
PELLIN, RA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (10) : 969 - 974
[6] THE TEMPERATURE DISTRIBUTION IN PULLED GERMANIUM CRYSTALS DURING GROWTH
BRICE, JC
WHIFFIN, PAC
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 183 - 187
[7] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS
DASH, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 459 - 474
[8] DEMCHENKO VV, 1962, ZH FIZ KHIM+, V36, P2524
[9] CROSS-SECTIONAL RESISTIVITY VARIATIONS IN GERMANIUM SINGLE CRYSTALS
DIKHOFF, JAM
[J]. SOLID-STATE ELECTRONICS, 1960, 1 (03) : 202 - &
[10] GAULE GK, 1961, METALLURGY ELEMENTAL, P201