CZOCHRALSKI SILICON PULL RATE LIMITS

被引：38

作者：

REA, SN ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 54卷 / 02期

关键词：

D O I：

10.1016/0022-0248(81)90471-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：267 / 274

页数：8

共 16 条

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[8] CRYSTAL-GROWTH CONSIDERATIONS IN USE OF SOLAR GRADE SILICON [J].

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[9]

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[10] NUMERICAL ANALYSES OF SOLID-LIQUID INTERFACE SHAPES DURING CRYSTAL GROWTH BY CZOCHRALSKI METHOD [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (04) :361-+

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