LUMINESCENCE EXCITATION MECHANISMS IN CDS FROM DEPENDENCE OF PHOTOLUMINESCENCE AND THERMO-LUMINESCENCE ON PERSISTENT CONDUCTIVITY STORED CHARGE STATE

被引:1
作者
REED, MA [1 ]
HONIG, A [1 ]
机构
[1] SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13210
关键词
D O I
10.1016/0022-2313(84)90312-0
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:415 / 417
页数:3
相关论文
共 4 条
[1]  
HONIG A, 1982, SOLID STATE COMM, V44, P148
[2]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030
[3]   HALL-EFFECT ANALYSIS OF PERSISTENT PHOTOCURRENTS IN N-GAAS LAYERS [J].
QUEISSER, HJ ;
THEODOROU, DE .
PHYSICAL REVIEW LETTERS, 1979, 43 (05) :401-404
[4]  
REED MA, 1983, B AM PHYS SOC, V28, P536