NUMERICAL TECHNIQUE TO CALCULATE EIGENENERGIES AND EIGENSTATES OF QUANTUM-WELLS WITH ARBITRARY POTENTIAL PROFILE

被引：11

作者：

DAVE, DP

机构：

[1] Department of Electrical Engineering, Texas A&M University, TX 77843, College Station

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 19期

关键词：

NUMERICAL METHODS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19911080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A numerical technique for the exact analysis of quantum wells with arbitrary potential profile is presented. Numerical examples for GaAs/Al(x)Ga1-xAs rectangular quantum wells, graded wells and wells with applied electric field are presented. The technique is simple but highly accurate and can be easily implemented on a small computer such as a PC.

引用

页码：1735 / 1737

页数：3

共 4 条

[1]

ADACHI A, 1987, J APPL PHYS, V58, pR1

[2] QUANTUM-CONFINED STARK-EFFECT IN GRADED-GAP QUANTUM-WELLS [J].