EFFECT OF CONDUCTION-BAND NONPARABOLICITY ON QUANTIZED ENERGY-LEVELS OF A QUANTUM-WELL

被引：62

作者：

HIROSHIMA, T

LANG, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 08期

关键词：

D O I：

10.1063/1.97114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：456 / 457

页数：2

相关论文

共 7 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) : 8775 - 8792
[2] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
[3] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
[4] MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS
LUTTINGER, JM
KOHN, W
[J]. PHYSICAL REVIEW, 1955, 97 (04): : 869 - 883
[5] CURRENT TRANSPORT IN AL/INALAS/INGAAS HETEROSTRUCTURES
MORGAN, DV
BOARD, K
WOOD, CEC
EASTMAN, LF
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (01): : 251 - 260
[6] CALCULATION OF THE CONDUCTION-BAND DISCONTINUITY FOR GA0.47IN0.53AS-AL0.48IN0.52AS HETEROJUNCTION
WELCH, DF
WICKS, GW
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3176 - 3179
[7] BALLISTIC TRANSPORT IN GAAS
WILLIAMS, CK
GLISSON, TH
LITTLEJOHN, MA
HAUSER, JR
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) : 161 - 163