ORIENTATION DEPENDENCE OF LATTICE STRAIN IN SILICON EPITAXIAL WAFERS

被引：5

作者：

MIHARA, M

HARA, T

ARAI, M

NAKAJIMA, M

NAKAMURA, S

机构：

[1] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI,JAPAN

[2] MATSUSHITA ELECTR IND CO LTD,CENT RES LAB,MORIGUCHI,OSAKA,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 01期

关键词：

D O I：

10.1063/1.88879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1 / 3

页数：3

相关论文

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