HIGH-POWER 1.017-MU-M STRAINED-LAYER QUANTUM-WELL LASERS GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION

被引：10

作者：

OHKUBO, M

IJICHI, T

IKETANI, A

KIKUTA, T

机构：

[1] Yokohama R and D Laboratories, Furukawa Electric Co.,Ltd., Nishi-ku, Yokohama 220, 2-4-3, Okano

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 12期

关键词：

D O I：

10.1063/1.107306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated InGaAs/GaAs/InGaP strained-layer single quantum well (SLSQW) lasers emitting at 1.017-mu-m, which are suitable pumping sources for Pr3+-doped fluoride 1.3-mu-m fiber amplifiers, grown by metalorganic chemical-vapor deposition (MOCVD). A very low threshold current density of 80 A/cm2 was obtained for the broad-area lasers. This value is comparable to that of 0.98-mu-m SLSQW lasers. Continuous wave light output power of over 100 mW was achieved on the 2-mu-m-wide ridge waveguide lasers.

引用

页码：1413 / 1414

页数：2

共 9 条

[1] CHARACTERIZATION OF INGAAS-GAAS STRAINED-LAYER LASERS WITH QUANTUM WELLS NEAR THE CRITICAL THICKNESS [J].