RELIABLE INGAAS QUANTUM-WELL LASERS AT 1.1-MU-M

被引：13

作者：

YELLEN, SL ^{[1
]}

WATERS, RG ^{[1
]}

YORK, PK ^{[1
]}

BEERNINK, KJ ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 07期

关键词：

LASERS AND LASER APPLICATIONS; RELIABILITY; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19910348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained-layer InGaAs quantum well lasers operating CW at 1.1-mu-m have been life tested to over 18000 h, exhibiting a degradation rate of < 1.8% per kh. These uncoated lasers were life tested at 70 mW (per facet) in constant-power mode at a heatsink temperature of 30-degrees-C. The laser structure, grown by metalorganic chemical vapour deposition, incorporates a step-graded quantum well heterostructure with a 30 angstrom In0.45Ga0.55As quantum well.

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收藏

页码：552 / 554

页数：3

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