MODELING THE DC CHARACTERISTICS OF GAAS-MESFETS FOR CAD

被引：4

作者：

ABUELMAATTI, MT

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1986年 / 61卷 / 03期

关键词：

D O I：

10.1080/00207218608920881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：397 / 400

页数：4

共 15 条

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[2]

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[3]

HARTNAGEL HL, 1982, AEU, V26, P83

[4] COMPACT DC MODEL OF GAAS-FETS FOR LARGE-SIGNAL COMPUTER CALCULATION [J].

KACPRZAK, T ;

MATERKA, A .

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[6]

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MATERKA, A ;

KACPRZAK, T .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (02) :129-135

[8] MODELING DC CHARACTERISTICS OF DUAL-GATE GAAS-MESFETS [J].

MINASIAN, RA .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (04) :182-186

[9] GAAS-MESFET ICS FOR GIGABIT LOGIC APPLICATIONS [J].

NUZILLAT, G ;

PEREA, EH ;

BERT, G ;

DAMAYKAVALA, F ;

GLOANEC, M ;

PELTIER, M ;

NGU, TP ;

ARNODO, C .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (03) :569-584

[10] LARGE-SIGNAL TECHNIQUE FOR DESIGNING SINGLE-FREQUENCY AND VOLTAGE-CONTROLLED GAAS-FET OSCILLATORS [J].

RAUSCHER, C .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (04) :293-304

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