SURFACE-INDUCED PERTURBATION OF LVV AUGER-SPECTRA

被引:21
作者
DURBIN, SM
GOG, T
机构
关键词
D O I
10.1103/PhysRevLett.63.1304
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:1304 / 1306
页数:3
相关论文
共 10 条
[1]   PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].
BEAN, JC ;
SHENG, TT ;
FELDMAN, LC ;
FIORY, AT ;
LYNCH, RT .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :102-104
[2]   GEOMETRICAL STRUCTURES OF THE GE/SI(111) INTERFACE AND THE SI(111) (7X7) SURFACE [J].
DEV, BN ;
MATERLIK, G ;
GREY, F ;
JOHNSON, RL ;
CLAUSNITZER, M .
PHYSICAL REVIEW LETTERS, 1986, 57 (24) :3058-3061
[3]   MEASUREMENT OF THE SILICON (111) SURFACE CONTRACTION [J].
DURBIN, SM ;
BERMAN, LE ;
BATTERMAN, BW ;
BLAKELY, JM .
PHYSICAL REVIEW LETTERS, 1986, 56 (03) :236-239
[4]   A SIMPLE MODEL FOR DEPENDENCE OF AUGER INTENSITIES ON SPECIMEN THICKNESS [J].
GALLON, TE .
SURFACE SCIENCE, 1969, 17 (02) :486-&
[5]   AUGER-ELECTRON SPECTROSCOPY AS A LOCAL PROBE OF ATOMIC CHARGE - SI L2,3VV [J].
JENNISON, DR .
PHYSICAL REVIEW LETTERS, 1978, 40 (12) :807-809
[6]   CORRECTION OF DISTORTIONS IN SPECTRAL-LINE PROFILES - APPLICATIONS TO ELECTRON SPECTROSCOPIES [J].
MADDEN, HH ;
HOUSTON, JE .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3071-3082
[7]  
Mularie W. M., 1970, Surface Science, V19, P469, DOI 10.1016/0039-6028(70)90055-5
[8]   NORMAL DISPLACEMENTS ON A RECONSTRUCTED SILICON (111) SURFACE - AN X-RAY STANDING-WAVE STUDY [J].
PATEL, JR ;
FREELAND, PE ;
GOLOVCHENKO, JA ;
KORTAN, AR ;
CHADI, DJ ;
QIAN, GX .
PHYSICAL REVIEW LETTERS, 1986, 57 (24) :3077-3080
[9]   ABSENCE OF PLASMON-GAIN SATELLITES IN AUGER SPECTRUM OF SILICON [J].
ROWE, JE ;
CHRISTMAN, SB .
SOLID STATE COMMUNICATIONS, 1973, 13 (03) :315-318
[10]  
Seah M P, 1979, SURF INTERFACE ANAL, V1, P2, DOI DOI 10.1002/SIA.740010103