NORMAL DISPLACEMENTS ON A RECONSTRUCTED SILICON (111) SURFACE - AN X-RAY STANDING-WAVE STUDY

被引：21

作者：

PATEL, JR ^{[1
]}

FREELAND, PE ^{[1
]}

GOLOVCHENKO, JA ^{[1
]}

KORTAN, AR ^{[1
]}

CHADI, DJ ^{[1
]}

QIAN, GX ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 57卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.57.3077

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：3077 / 3080

页数：4

相关论文

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