LONGITUDINAL ANALYSIS OF SEMICONDUCTOR-LASERS WITH LOW REFLECTIVITY FACETS

[1] AGRAWAL GP, 1983, APPL PHYS LETT, V43

[2] LATERAL-MODE BEHAVIOR IN NARROW STRIPE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 727 - 733

[3] LONGITUDINAL STATIC-FIELD MODEL FOR DH LASERS [J]. ELECTRONICS LETTERS, 1984, 20 (01) : 41 - 42

[4] BAETS R, UNPUB COMP BEAM PROP

[5] Buus J., 1985, IEE Proceedings J (Optoelectronics), V132, P42, DOI 10.1049/ip-j.1985.0010

[6] THE EFFECTIVE INDEX METHOD AND ITS APPLICATION TO SEMICONDUCTOR-LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (07) : 1083 - 1089

[7] BUUS J, 1983, IEEE J QUANTUM ELECT, P953

[8] HIGH-SPEED LASER MODULATION WITH INTEGRATED OPTICAL-INJECTION [J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 975 - 978

[9] CARRIER TRANSPORT IN DOUBLE-HETEROSTRUCTURE ACTIVE LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7235 - 7239

[10] FAR FIELD ASYMMETRY IN NARROW STRIPE GAIN-GUIDED LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (08) : 1287 - 1294

[1] AGRAWAL GP, 1983, APPL PHYS LETT, V43

[2] LATERAL-MODE BEHAVIOR IN NARROW STRIPE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 727 - 733

[3] LONGITUDINAL STATIC-FIELD MODEL FOR DH LASERS [J]. ELECTRONICS LETTERS, 1984, 20 (01) : 41 - 42

[4] BAETS R, UNPUB COMP BEAM PROP

[5] Buus J., 1985, IEE Proceedings J (Optoelectronics), V132, P42, DOI 10.1049/ip-j.1985.0010

[6] THE EFFECTIVE INDEX METHOD AND ITS APPLICATION TO SEMICONDUCTOR-LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (07) : 1083 - 1089

[7] BUUS J, 1983, IEEE J QUANTUM ELECT, P953

[8] HIGH-SPEED LASER MODULATION WITH INTEGRATED OPTICAL-INJECTION [J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 975 - 978

[9] CARRIER TRANSPORT IN DOUBLE-HETEROSTRUCTURE ACTIVE LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7235 - 7239

[10] FAR FIELD ASYMMETRY IN NARROW STRIPE GAIN-GUIDED LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (08) : 1287 - 1294