CARBON AND SILICON IN TRAVELING HEATER METHOD GROWN SEMIINSULATING CDTE

被引：9

作者：

CHIBANI, L

HAGEALI, M

STOQUERT, JP

KOEBEL, JM

SIFFERT, P

机构：

[1] Centre de Recherches Nucléaires (CRN), Laboratorie PHASE (UPR du CNRS n 292), 67037 Strasbourg Cedex 2

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 16卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(93)90044-N

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon- and silicon-doped CdTe have been studied by charged particle activation heavy ion induced X-ray emission and secondary ion mass spectroscopy to determine the impurities present at low concentrations. Electrical characteristics have been investigated by thermally stimulated current and the Van der Pauw resistivity measurements, in order to correlate the impurity concentrations and electrical behaviours.

引用

页码：202 / 206

页数：5

共 16 条

[1]

ALNEAMI A, 1988, THESIS U L PASTEUR S

[2] ELECTRON-PARAMAGNETIC RESONANCE INVESTIGATION OF PB-DOPED AND GE-DOPED CDTE [J].