CARRIER PROFILE EVALUATION FOR A ZN-DOPED INGAASP/INGAASP MULTIQUANTUM WELL USING A LOW-TEMPERATURE CAPACITANCE-VOLTAGE METHOD

We studied the carrier profile of a Zn-doped InGaAsP/InGaAsP multiquantum well (MQW) using capacitance-voltage (C-V) measurement. Lowering the temperature to 77 K suppresses the Debye length, allowing us to obtain a detailed carrier profile. Furthermore, we propose a method for analyzing the carrier profile, taking the exact depletion layer extension at pn junction into account. Applying the analysis, we obtained the actual carrier profile in the doped MQW with agreement between the peak position in the profile and the well position of MQW. This shows that the low-temperature C-V measurement is effective for investigating the carrier profile in MQW.