REACTION-KINETICS OF NICKEL SILICON MULTILAYER FILMS

被引：95

作者：

CLEVENGER, LA ^{[1
]}

THOMPSON, CV ^{[1
]}

CAMMARATA, RC ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.99644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：795 / 797

页数：3

相关论文

共 14 条

[1] CLEVENGER LA, 1987 P S MULT SYNTH
[2] FORMATION OF THIN-FILMS OF NISI - METASTABLE STRUCTURE, DIFFUSION MECHANISMS IN INTERMETALLIC COMPOUNDS
DHEURLE, F
PETERSSON, CS
BAGLIN, JEE
LAPLACA, SJ
WONG, CY
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4208 - 4218
[3] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON
DONOVAN, EP
SPAEPEN, F
TURNBULL, D
POATE, JM
JACOBSON, DC
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700
[4] PROPAGATION OF EXPLOSIVE CRYSTALLIZATION IN THIN RH-SI MULTILAYER FILMS
FLORO, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 631 - 636
[5] GROWTH-KINETICS OF PLANAR BINARY DIFFUSION COUPLES - THIN-FILM CASE VERSUS BULK CASES
GOSELE, U
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3252 - 3260
[6] DIFFERENTIAL SCANNING CALORIMETRY STUDY OF SOLID-STATE AMORPHIZATION IN MULTILAYER THIN-FILM NI/ZR
HIGHMORE, RJ
EVETTS, JE
GREER, AL
SOMEKH, RE
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (10) : 566 - 568
[7] HIGHMORE RJ, IN PRESS J LESS COMM
[8] KISSINGER HE, 1957, ANAL CHEM, V29, P1702, DOI DOI 10.1021/AC60131A045
[9] TEMPERATURE AND THICKNESS EFFECTS ON THE EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-GERMANIUM FILMS
KOBA, R
WICKERSHAM, CE
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 672 - 675
[10] MURARKA SP, 1983, SLILICIDES VLSI APPL, P164