STABLE-LOCKING BANDWIDTH IN SIDEMODE INJECTION LOCKED SEMICONDUCTOR-LASERS

被引：16

作者：

LUO, JM ^{[1
]}

OSINSKI, M ^{[1
]}

机构：

[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 19期

关键词：

SEMICONDUCTOR LASERS; OPTOELECTRONICS; LASERS AND LASER APPLICATIONS;

D O I：

10.1049/el:19911081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical expression for the possible sidemode locking bandwidth, consistent with the formula for peak-mode injection locking, is derived. Small-signal analysis is then applied to investigate the stable part of the locking range. The results demonstrate that sidemode injection locking offers relaxed operational requirements for frequency matching, with enhanced bandwidth, while retaining the traditional benefits of injection locking.

引用

页码：1737 / 1739

页数：3

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