ELECTRON CORRELATION AND PHASE-DEPENDENT ELECTRONIC-STRUCTURE OF C-7O

被引：28

作者：

KNUPFER, M ^{[1
]}

POIRIER, DM ^{[1
]}

WEAVER, JH ^{[1
]}

机构：

[1] KERNFORSCHUNGSZENTRUM KARLSRUHE GMBH,INST NUKL FESTKORPERPHYS,D-76021 KARLSRUHE,GERMANY

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.49.2281

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly ordered thin films of C-70 have been grown on GaAs(110). Temperature-dependent photoemission studies show changes in the valence-band electronic structure that are related to solid-state phase transitions at similar to 280 and similar to 340 K. The average on-site correlation energy for C-70 is determined to be 1.0 +/- 0.2 eV, based on comparison of the C KVV Auger spectrum with a self-convolution of the valence band obtained from photoemission.

引用

页码：2281 / 2284

页数：4

共 38 条

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