THE ELECTRICAL-PROPERTIES OF CUINSE2 THIN-FILMS DEPOSITED ONTO CAF2 SUBSTRATES

被引：17

作者：

NEUMANN, H ^{[1
]}

NOWAK, E ^{[1
]}

KUHN, G ^{[1
]}

HEISE, B ^{[1
]}

机构：

[1] KARL MARX UNIV,SEKT PHYS,WISSENSCH BEREICH KRISTALLOG,DDR-7010 LEIPZIG,GER DEM REP

来源：

关键词：

D O I：

10.1016/0040-6090(83)90087-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：201 / 208

页数：8

共 26 条

[11] NEUMANN H, 1981, CRYST RES TECHNOL, V16, P1369
[12] ELECTRICAL-PROPERTIES OF N-TYPE CUINSE2 SINGLE-CRYSTALS
NEUMANN, H
VANNAM, N
HOBLER, HJ
KUHN, G
[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (11) : 899 - 902
[13] HOLE EFFECTIVE MASSES IN CUINSE2
NEUMANN, H
SOBOTTA, H
KISSINGER, W
RIEDE, V
KUHN, G
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 108 (02): : 483 - 487
[14] ELECTRICAL-PROPERTIES OF CUGATE2 EPITAXIAL LAYERS
NEUMANN, H
PETERS, D
SCHUMANN, B
KUHN, G
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 52 (02): : 559 - 564
[15] EPITAXIAL LAYERS OF CUINTE2 ON GAAS
NEUMANN, H
NOWAK, E
SCHUMANN, B
TEMPEL, A
KUHN, G
[J]. KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (01): : 61 - 69
[16] NEUMANN H, 1981, PROG CRYST GROWTH CH, V3, P157
[17] NEUMANN H, 1979, WISS Z K MARX U MN, V28, P537
[18] ELECTRICAL PROPERTIES OF CU IN SE2 SINGLE-CRYSTALS
PARKES, J
TOMLINSON, RD
HAMPSHIRE, MJ
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (07) : 773 - 777
[19] FABRICATION OF P AND N TYPE SINGLE-CRYSTALS OF CUINSE2
PARKES, J
TOMLINSON, RD
HAMPSHIRE, MJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1973, 20 (04) : 315 - 318
[20] AN EVALUATION OF SOME PHYSICAL CHARACTERISTICS OF CUINSE2 THIN-FILMS PRODUCED BY RF SPUTTERING
SAMAAN, ANY
ABDULHUSSEIN, NAK
TOMLINSON, RD
HILL, AE
ARMOUR, DG
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : 15 - 22