PULSED SPACE-CHARGE-LIMITED CURRENTS IN GAAS

被引：1

作者：

GILDENBLAT, GS ^{[1
]}

RAO, AR ^{[1
]}

机构：

[1] PENN STATE UNIV, DEPT ELECT ENGN, UNIVERSITY PK, PA 16802 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 04期

关键词：

D O I：

10.1109/EDL.1987.26578

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：135 / 136

页数：2

共 16 条

[1] SPACE-CHARGE LIMITED HOLE CURRENT IN GERMANIUM [J].

DACEY, GC .

PHYSICAL REVIEW, 1953, 90 (05) :759-763

[2] PURE SPACE-CHARGE-LIMITED ELECTRON CURRENT IN SILICON [J].

DENDA, S ;

NICOLET, MA .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2412-&

[3] NEW ANALYTICAL SOLUTION FOR A CURRENT VOLTAGE CHARACTERISTIC OF SPACE-CHARGE-LIMITED CURRENTS WITH A NONLINEAR VELOCITY-FIELD RELATIONSHIP [J].

GILDENBLAT, GS ;

COHEN, SS .

ELECTRONICS LETTERS, 1986, 22 (25) :1322-1323

[4]

GILDENBLAT GS, 1978, SOV PHYS SEMICOND+, V12, P565

[5]

GILDENBLAT GS, 1987, IN PRESS J APPL PHYS

[6] EXPERIMENTAL INVESTIGATIONS OF SINGLE INJECTION IN COMPENSATED SILICON AT LOW TEMPERATURES [J].

GREGORY, BL ;

JORDAN, AG .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1378-&

[7]

Lampert M.A., 1970, CURRENT INJECTION SO

[8] SIMPLIFIED THEORY OF ONE-CARRIER CURRENTS WITH FIELD-DEPENDENT MOBILITIES [J].

LAMPERT, MA .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) :1082-1090

[9] SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS FOR VARIOUS GEOMETRIES AND FIELD-DEPENDENT MOBILITY [J].

LEE, DH ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :182-&

[10] 2-PORT MICROWAVE AMPLIFICATION IN LONG SAMPLES OF GALLIUM ARSENIDE [J].

ROBSON, PN ;

KINO, GS ;

FAY, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :612-+

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