EPITAXY OF GERMANIUM FILMS ON GALLIUM ARSENIDE BY VACUUM EVAPORATION

被引：8

作者：

LEVER, RF

HUMINSKI, EJ

机构：

来源：

关键词：

D O I：

10.1063/1.1708926

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3638 / &

共 7 条

[1] GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS [J].

ANDERSON, RL .

COURVOISIER, JC ;

HAIDINGER, W ;

JOCHEMS, PJW ;

TUMMERS, LJ .

DAVEY, JE ;

TIERNAN, RJ ;

PANKEY, T ;

MONTGOMERY, MD .

[4] EPITAXY OF GERMANIUM FILMS ON GERMANIUM BY VACUUM EVAPORATION [J].

DAVEY, JE .

[5] ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS [J].

REISMAN, A ;

ROHR, R .

[6]

REISZ RP, 1961, IRE T ELECTRON DEVIC, VED 8, P430

[7]

THURMOND CD, 1965, J PHYS CHEM SOLIDS, V26, P798