GAAS BURIED HETEROSTRUCTURE VERTICAL CAVITY TOP-SURFACE EMITTING LASERS

被引：15

作者：

IBARAKI, A

FURUSAWA, K

ISHIKAWA, T

YODOSHI, K

YAMAGUCHI, T

NIINA, T

机构：

[1] Sanyo Electric Co., Ltd., Hirakat

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 06期

关键词：

D O I：

10.1109/3.89955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature CW operation was achieved with GaAs buried heterostructure (BH) vertical cavity top-surface emitting lasers. CW threshold current of 17.4 mA with lasing wavelength of 911 nm was measured. A 5 x 6 array consisting of these lasers was also demonstrated. Lasing operation was observed with a common voltage for all elements.

引用

页码：1386 / 1390

页数：5

共 12 条

[11] ROOM-TEMPERATURE CONTINUOUS-WAVE VERTICAL-CAVITY SURFACE-EMITTING GAAS INJECTION-LASERS [J].