LOGARITHMIC TIME-DEPENDENCE OF PMOSFET DEGRADATION OBSERVED FROM GATE CAPACITANCE

被引：9

作者：

LING, CH ^{[1
]}

YEOW, YT ^{[1
]}

AH, LK ^{[1
]}

YUNG, WH ^{[1
]}

CHOI, WK ^{[1
]}

机构：

[1] UNIV QUEENSLAND,DEPT ELECT ENGN,ST LUCIA,QLD 4067,AUSTRALIA

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 04期

关键词：

FIELD-EFFECT TRANSISTORS; MOSFETS; CAPACITANCE;

D O I：

10.1049/el:19930280

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot-carrier degradation in pMOSFETs is observed from an increase in gate overlap capacitance, due to trapped electrons in the gate oxide inverting a portion of the channel near the stressed junction. Logarithmic time growth of the overlap capacitance, and hence of the trapped charge, is reported.

引用

页码：418 / 420

页数：3

共 6 条

[1] ANALYSIS OF VELOCITY SATURATION AND OTHER EFFECTS ON SHORT-CHANNEL MOS-TRANSISTOR CAPACITANCES
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[3] Matsuoka F., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P18, DOI 10.1109/IEDM.1988.32739
[4] EXPLANATION AND MODEL FOR THE LOGARITHMIC TIME-DEPENDENCE OF P-MOSFET DEGRADATION
WANG, Q
BROX, M
KRAUTSCHNEIDER, WH
WEBER, W
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (05) : 218 - 220
[5] Woltjer R., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P561, DOI 10.1109/IEDM.1990.237136
[6] OBSERVATION OF MOSFET DEGRADATION DUE TO ELECTRICAL STRESSING THROUGH GATE-TO-SOURCE AND GATE-TO-DRAIN CAPACITANCE MEASUREMENT
YEOW, YT
LING, CH
AH, LK
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (07) : 366 - 368

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