THEORY OF OPTICAL INTERBAND-TRANSITIONS IN STRAINED SI1-YCY GROWN PSEUDOMORPHICALLY ON SI(001)

被引：14

作者：

ZOLLNER, S ^{[1
]}

机构：

[1] IOWA STATE UNIV SCI & TECHNOL,DEPT PHYS & ASTRON,AMES,IA 50011

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 08期

关键词：

D O I：

10.1063/1.359696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently W. Kissinger, M. Weidner, H. J. Osten, and M. Eichler [Appl. Phys. Lett. 65, 3356 (1994)] reported ellipsometry and electroreflectance measurements on the E(0)', E(1), and E(2) critical point energies in strained Si1-yCy alloys grown pseudomorphically on Si (001) using molecular-beam epitaxy. We present a theory explaining these energies using established deformation-potential theory and interpret the results and their implications for the band structure of these alloys. (C) 1995 American Institute of Physics.

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页码：5209 / 5211

页数：3

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