AMORPHOUS-SILICON LANGMUIR-BLODGETT FILM FIELD-EFFECT TRANSISTOR

被引：21

作者：

LLOYD, JP ^{[1
]}

PETTY, MC ^{[1
]}

ROBERTS, GG ^{[1
]}

LECOMBER, PG ^{[1
]}

SPEAR, WE ^{[1
]}

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

关键词：

D O I：

10.1016/0040-6090(83)90396-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：297 / 304

页数：8

共 17 条

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VINCETT, PS
BARLOW, WA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (10): : 2077 - 2085
[12] ROBERTS GG, 1981, P C INSULATING FILMS, P56
[13] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN ADDRESSABLE LIQUID-CRYSTAL DISPLAY PANELS
SNELL, AJ
MACKENZIE, KD
SPEAR, WE
LECOMBER, PG
HUGHES, AJ
[J]. APPLIED PHYSICS, 1981, 24 (04): : 357 - 362
[14] DOPED AMORPHOUS-SEMICONDUCTORS
SPEAR, WE
[J]. ADVANCES IN PHYSICS, 1977, 26 (06) : 811 - 845
[15] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI
STAEBLER, DL
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294
[16] SZE SM, 1981, PHYSICS SEMICONDUCTO, pCH7
[17] TREDGOLD RH, 1982, COMMUNICATION