MICRODEFECT DENSITY DETERMINATION BY X-RAY HUANG SCATTERING NORMALIZED OVER THERMAL DIFFUSE-SCATTERING

被引：20

作者：

CHARNYI, LA

SHERBACHEV, KD

BUBLIK, VT

机构：

[1] X-Ray Diffraction Analysis Laboratory, Department of Semiconductor Materials and Devices

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 128卷 / 02期

关键词：

D O I：

10.1002/pssa.2211280205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The normalizing of Huang intensity I(H) by means of the thermal diffuse scattering intensity I(T) measurements is used for microdefect density determination. If I(H)(q) and I(T)(q) dominate for the wave vector \q\ < R0(-1) and \q\ much greater than R0(-1), respectively, where R0 is the mean microdefect radius, they can be measured during the same experimental run. Dislocation loop concentration determined by this method in nondislocative Si-doped GaAs crystal appears to be 7 x 10(9) cm-3 and the number of interstitial atoms forming dislocation loops is equal to 10(16) cm-3.

引用

页码：303 / 309

页数：7

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