THE EFFECT OF TERMINAL LEVEL LIFETIME ON 3-MICRON LASER-EMISSION IN ER-DOPED CRYSTALS

被引：9

作者：

LUPEI, V

GEORGESCU, S

FLOREA, V

机构：

[1] Institute of Atomic Physics, Bucharest, R-76900

来源：

OPTICS COMMUNICATIONS | 1992年 / 92卷 / 1-3期

关键词：

D O I：

10.1016/0030-4018(92)90220-L

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The effect of reducing the lifetime of the terminal laser level for three-Micron laser emission in erbium doped crystals by co-doping with ions as Nd3+, Tm3+ or Ho3+ is discussed using the stationary regime solution of laser rate equations. It is shown that this effect could be beneficial or detrimental, depending on the specific laser transition. Reduction of T1 may also change the spectral characteristics of the emission.

引用

页码：67 / 72

页数：6

共 20 条

[1]

ANDRIASYAN MA, 1982, KVANTOVAYA ELEKTRON+, V9, P1269

[2]

GEORGESCU S, 1986, REV ROUM PHYS, V31, P857

[3] CONCENTRATION EFFECTS ON THE UP-CONVERSION FROM THE 4I13/2 LEVEL OF ER3+ IN YAG [J].