AN ANALYSIS OF THE PROCESS OF RECRYSTALLIZATION OF SILICON THIN-FILMS WITH EITHER A SCANNING LASER OR STRIP HEATER

[1] Biegelsen D. K., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P487

[2] SILICON FOR ELECTRONIC DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 48 (04) : 514 - 529

[3] Calder I. D., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P489

[4] SUB-MICRON EUTECTIC THIN-FILM STRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4896 - 4902

[5] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3895 - 3900

[6] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367

[7] SINGLE-CRYSTAL SI FILMS ON SIO2 PREPARED BY USING A STATIONARY GRAPHITE HEATER FOR LATERAL EPITAXY BY SEEDED SOLIDIFICATION [J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 308 - 310

[8] FAN JCC, 1982, LASER ELECTRON BEAM, P759

[9] THERMAL CONDUCTIVITY ELECTRICAL RESISTIVITY AND SEEBECK COEFFICIENT OF SILICON FROM 100 TO 1300 DEGREE K [J]. PHYSICAL REVIEW, 1968, 167 (03): : 765 - +

[10] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778

[1] Biegelsen D. K., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P487

[2] SILICON FOR ELECTRONIC DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 48 (04) : 514 - 529

[3] Calder I. D., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P489

[4] SUB-MICRON EUTECTIC THIN-FILM STRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4896 - 4902

[5] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) : 3895 - 3900

[6] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367

[7] SINGLE-CRYSTAL SI FILMS ON SIO2 PREPARED BY USING A STATIONARY GRAPHITE HEATER FOR LATERAL EPITAXY BY SEEDED SOLIDIFICATION [J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 308 - 310

[8] FAN JCC, 1982, LASER ELECTRON BEAM, P759

[9] THERMAL CONDUCTIVITY ELECTRICAL RESISTIVITY AND SEEBECK COEFFICIENT OF SILICON FROM 100 TO 1300 DEGREE K [J]. PHYSICAL REVIEW, 1968, 167 (03): : 765 - +

[10] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778