ON THE EVAPORATION RATE OF SILICON

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[2] DIFFUSION OF IMPURITIES INTO EVAPORATING SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) : 259 - 264

[3] VAPOR PRESSURE OF SILICON AND DISSOCIATION PRESSURE OF SILICON CARBIDE [J]. JOURNAL OF CHEMICAL PHYSICS, 1961, 34 (02) : 659 - &

[4] METAL TIPS PRODUCED BY ELECTRON BOMBARDMENT [J]. VACUUM, 1970, 20 (11) : 491 - +

[5] THERMODYNAMIC STUDY OF SIC UTILIZING A MASS SPECTROMETER [J]. JOURNAL OF CHEMICAL PHYSICS, 1958, 29 (05) : 1015 - 1021

[6] DUSHMAN S, 1962, SCI F VACUUM TECHNIQ, P691

[7] ELAWAD OA, 1984, THESIS U LYON

[8] GRIEVESON P, 1961, SPECIAL CERAMICS, P183

[9] Honig R.E, 1967, CHARACTERIZATION HIG, P475

[10] Honig R. E, 1957, RCA REV, V18, P195

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1510 - 1511

[2] DIFFUSION OF IMPURITIES INTO EVAPORATING SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) : 259 - 264

[3] VAPOR PRESSURE OF SILICON AND DISSOCIATION PRESSURE OF SILICON CARBIDE [J]. JOURNAL OF CHEMICAL PHYSICS, 1961, 34 (02) : 659 - &

[4] METAL TIPS PRODUCED BY ELECTRON BOMBARDMENT [J]. VACUUM, 1970, 20 (11) : 491 - +

[5] THERMODYNAMIC STUDY OF SIC UTILIZING A MASS SPECTROMETER [J]. JOURNAL OF CHEMICAL PHYSICS, 1958, 29 (05) : 1015 - 1021

[6] DUSHMAN S, 1962, SCI F VACUUM TECHNIQ, P691

[7] ELAWAD OA, 1984, THESIS U LYON

[8] GRIEVESON P, 1961, SPECIAL CERAMICS, P183

[9] Honig R.E, 1967, CHARACTERIZATION HIG, P475

[10] Honig R. E, 1957, RCA REV, V18, P195