DIODE N-P CUINSE2 STRUCTURES FABRICATED BY OXYGEN IMPLANTATION

被引：6

作者：

MEDVEDKIN, GA ^{[1
]}

RUD, VY ^{[1
]}

YAKUSHEV, MV ^{[1
]}

机构：

[1] URALS POLYTECH INST,SVERDLOVSK 620002,USSR

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1990年 / 25卷 / 11期

关键词：

D O I：

10.1002/crat.2170251113

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of oxygen implantation on the electrical features of n-type CuInSe2 single crystals has been studied. n-p type conversion in the implanted region has been observed. Photoelectric characteristics of the fabricated structures have been examined. It has been shown that ion implantation allows to fabricate CuInSe2 photoconverters with the absolute current sensitivity up to S(i) = 33 mA/W at 300 K.

引用

页码：1299 / 1302

页数：4

共 8 条

[1]

KUHN G, 1987, Z CHEM, V27, P197

[2]

MEDVEDKIN GA, 1987, POVERKHNOST, P81

[3]

MEDVEDKIN GA, 1989, SOV PHYS SEMICOND, V23, P869

[4]

Mickelsen R.A., 1987, 19TH P IEEE PHOT SPE, P744