ELECTROLUMINESCENCE IN BR-IMPLANTED, CL-IMPLANTED, AND ZN-IMPLANTED CULNSE2 P-N-JUNCTION DIODES

被引：27

作者：

YU, PW

PARK, YS

GRANT, JT

机构：

[1] UNIV DAYTON,DEPT PHYS,DAYTON,OH 45469

[2] USAF,AVIONICS LABS,WRIGHT PATTERSON AFB,OH 45433

[3] UNIVERSAL ENERGY SYST INC,DAYTON,OH 45432

[4] AEROSPACE RES LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 04期

关键词：

D O I：

10.1063/1.88701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：214 / 216

页数：3

共 9 条

[1]

ARNOLD GW, 1971, ION IMPLANTATION SEM, P168

[2] ARSENIC AND CADMIUM IMPLANTATIONS INTO N-TYPE GALLIUM ARSENIDE [J].

ITOH, T ;

KUSHIRO, Y .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :5120-+

[3] ULTIMATE LOWER LIMIT OF ATTENUATION IN GLASS OPTICAL WAVEGUIDES [J].

KECK, DB ;

MAURER, RD ;

SCHULTZ, PC .

APPLIED PHYSICS LETTERS, 1973, 22 (07) :307-309

[4] SPUTTERING YIELDS OF METALS FOR AR+ AND NE+ IONS WITH ENERGIES FROM 50 TO 600 EV [J].

LAEGREID, N ;

WEHNER, GK .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (03) :365-&

[5] JUNCTION ELECTROLUMINESCENCE IN CULNSE2 [J].

MIGLIORATO, P ;

TELL, B ;

SHAY, JL ;

KASPER, HM .

APPLIED PHYSICS LETTERS, 1974, 24 (05) :227-228

[6]

SMITH RJ, 1971, R6660 AT EN RES EST

[7] ELECTROLUMINESCENCE AND PHOTOVOLTAIC DETECTION IN CD-IMPLANTED CULNSE2 P-N-JUNCTION DIODES [J].

YU, PW ;

PARK, YS ;

FAILE, SP ;

EHRET, JE .

APPLIED PHYSICS LETTERS, 1975, 26 (12) :717-719

[8] CADMIUM-DIFFUSED CULNSE2 JUNCTION DIODE AND PHOTOVOLTAIC DETECTION [J].

YU, PW ;

FAILE, SP ;

PARK, YS .

APPLIED PHYSICS LETTERS, 1975, 26 (07) :384-385

[9]

YU PY, UNPUBLISHED

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