ELECTROLUMINESCENCE AND PHOTOVOLTAIC DETECTION IN CD-IMPLANTED CULNSE2 P-N-JUNCTION DIODES

被引：44

作者：

YU, PW ^{[1
]}

PARK, YS ^{[1
]}

FAILE, SP ^{[1
]}

EHRET, JE ^{[1
]}

机构：

[1] AEROSP RES LABS,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 12期

关键词：

D O I：

10.1063/1.88048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：717 / 719

页数：3

共 9 条

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[2] ALKALI ION DOPING OF SILICON [J].

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TELL, B ;

SHAY, JL ;

KASPER, HM .

APPLIED PHYSICS LETTERS, 1974, 24 (05) :227-228

[4]

SMITH BJ, 1971, R6660 AT EN RES EST

[5] ROOM-TEMPERATURE ELECTRICAL PROPERTIES OF 10 I-III-VI2 SEMICONDUCTORS [J].

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[6] SOME PROPERTIES OF AGAITE2, AGGATE2, AND AGINTE2 [J].

TELL, B ;

SHAY, JL ;

KASPER, HM .

PHYSICAL REVIEW B, 1974, 9 (12) :5203-5208

[7] CULNSE2-CDS HETEROJUNCTION PHOTOVOLTAIC DETECTORS [J].

WAGNER, S ;

SHAY, JL ;

MIGLIORATO, P ;

KASPER, HM .

APPLIED PHYSICS LETTERS, 1974, 25 (08) :434-435

[8] SOME ELECTRICAL PROPERTIES OF AGGAS2 [J].

YU, PW ;

MANTHURU.J ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3694-3696

[9] CADMIUM-DIFFUSED CULNSE2 JUNCTION DIODE AND PHOTOVOLTAIC DETECTION [J].

YU, PW ;

FAILE, SP ;

PARK, YS .

APPLIED PHYSICS LETTERS, 1975, 26 (07) :384-385

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