ANISOTROPY IN WEAKLY LOCALIZED ELECTRONIC TRANSPORT - A PARAMETER-FREE TEST OF THE SCALING THEORY OF LOCALIZATION

被引：28

作者：

BISHOP, DJ ^{[1
]}

DYNES, RC ^{[1
]}

LIN, BJ ^{[1
]}

TSUI, DC ^{[1
]}

机构：

[1] PRINCETON UNIV,PRINCETON,NJ 08544

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.30.3539

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3539 / 3541

页数：3

共 15 条

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[5] MAGNETORESISTANCE IN SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS - EVIDENCE OF WEAK LOCALIZATION AND CORRELATION [J].

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[6]

BISHOP DJ, 1980, PHYS REV LETT, V44, P1153, DOI 10.1103/PhysRevLett.44.1153

[7]

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[8] THEORY OF WEAKLY LOCALIZED REGIME OF THE ANDERSON LOCALIZATION IN 2-DIMENSIONS [J].

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[9]

HIKAMI S, 1980, PROG THEOR PHYS, V63, P707, DOI 10.1143/PTP.63.707

[10] MAGNETORESISTANCE OF WEAKLY DISORDERED ELECTRONS [J].

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PHYSICAL REVIEW B, 1982, 26 (08) :4009-4012

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