ASGA-INDUCED DICHROISM IN GAAS - RESPOND

被引：5

作者：

MEYER, BK ^{[1
]}

SPAETH, JM ^{[1
]}

SCHEFFLER, M ^{[1
]}

机构：

[1] PHYS TECH BUNDESANSTALT,D-3300 BRUNSWICK,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 54卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.54.1333

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1333 / 1333

页数：1

共 13 条

[1] ASGA ANTISITE DEFECT IN GAAS [J].

BACHELET, GB ;

SCHLUTER, M ;

BARAFF, GA .

PHYSICAL REVIEW B, 1983, 27 (04) :2545-2547

[2]

BACHELET GB, 1985, 17TH P INT C PHYS SE

[3] OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF AS-ANTISITE DEFECTS IN GAAS [J].

HOFMANN, DM ;

MEYER, BK ;

LOHSE, F ;

SPAETH, JM .

PHYSICAL REVIEW LETTERS, 1984, 53 (12) :1187-1190

[4] HIGH-RESOLUTION STUDIES OF SULFUR-RELATED AND SELENIUM-RELATED DONOR CENTERS IN SILICON [J].

JANZEN, E ;

STEDMAN, R ;

GROSSMANN, G ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1984, 29 (04) :1907-1918

[5] ASGA-INDUCED DICHROISM IN GAAS [J].

KAUFMANN, U .

PHYSICAL REVIEW LETTERS, 1985, 54 (12) :1332-1332

[6]

LAGOWSKI J, 1985, J ELECTRON MATER A, V14, P73

[7]

Meyer B., UNPUB

[8] OPTICAL-PROPERTIES OF AS-ANTISITE AND EL2 DEFECTS IN GAAS [J].

MEYER, BK ;

SPAETH, JM ;

SCHEFFLER, M .

PHYSICAL REVIEW LETTERS, 1984, 52 (10) :851-854

[9]

MEYER BK, 1985, J ELECTRON MATER A, V14, P921

[10] ELECTRONIC-STRUCTURE AND IDENTIFICATION OF DEEP DEFECTS IN GAP [J].

SCHEFFLER, M ;

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1984, 29 (06) :3269-3282

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