ELECTRONIC-STRUCTURE AND IDENTIFICATION OF DEEP DEFECTS IN GAP

被引:41
作者
SCHEFFLER, M [1 ]
BERNHOLC, J [1 ]
LIPARI, NO [1 ]
PANTELIDES, ST [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
PHYSICAL REVIEW B | 1984年 / 29卷 / 06期
关键词
D O I
10.1103/PhysRevB.29.3269
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3269 / 3282
页数:14
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[1]  
AGGARWAL RL, 1965, PHYS REV, V140, P1246
[2]   NONRADIATIVE ELECTRONIC RELAXATION UNDER COLLISION-FREE CONDITIONS [J].
AVOURIS, P ;
GELBART, WM ;
ELSAYED, MA .
CHEMICAL REVIEWS, 1977, 77 (06) :793-833
[3]   SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895
[4]   NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979
[5]   ENFEEBLED OXYGEN BONDING AND METASTABILITY IN GAP-O [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 25 (02) :548-560
[6]   SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899
[7]   SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562
[8]   ELECTRONIC-STRUCTURE OF DEEP SP-BONDED SUBSTITUTIONAL IMPURITIES IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST ;
SCHEFFLER, M .
PHYSICAL REVIEW B, 1982, 26 (10) :5706-5715
[9]   THE ELECTRONIC-STRUCTURE OF DEEP SP-BONDED ACCEPTOR IMPURITIES IN SEMICONDUCTORS [J].
BERNHOLC, J ;
PANTELIDES, ST ;
LIPARI, NO ;
BALDERESCHI, A .
SOLID STATE COMMUNICATIONS, 1981, 37 (09) :705-708
[10]   JAHN-TELLER-DISTORTED NITROGEN DONOR IN LASER-ANNEALED SILICON [J].
BROWER, KL .
PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1627-1629