THE ELECTRONIC-STRUCTURE OF DEEP SP-BONDED ACCEPTOR IMPURITIES IN SEMICONDUCTORS

被引：13

作者：

BERNHOLC, J

PANTELIDES, ST

LIPARI, NO

BALDERESCHI, A

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 37卷 / 09期

关键词：

D O I：

10.1016/0038-1098(81)91082-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：705 / 708

页数：4

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