ELECTRONIC-STRUCTURE AND IDENTIFICATION OF DEEP DEFECTS IN GAP

被引:41
作者
SCHEFFLER, M [1 ]
BERNHOLC, J [1 ]
LIPARI, NO [1 ]
PANTELIDES, ST [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
PHYSICAL REVIEW B | 1984年 / 29卷 / 06期
关键词
D O I
10.1103/PhysRevB.29.3269
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3269 / 3282
页数:14
相关论文
共 50 条
[31]  
KOSTER GF, 1954, PHYS REV, V95, P1165
[32]   SELF-CONSISTENT 2ND-ORDER PERTURBATION TREATMENT OF MULTIPLET STRUCTURES USING LOCAL-DENSITY THEORY [J].
LANNOO, M ;
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1981, 24 (02) :943-954
[33]   MULTIPLET SPLITTINGS AND JAHN-TELLER ENERGIES FOR THE VACANCY IN SILICON [J].
LANNOO, M ;
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1981, 24 (02) :955-963
[34]  
LANNOO M, 1981, POINT DEFECTS SEMICO, V1, P141
[35]   ELECTRONIC-STRUCTURE OF THE JAHN-TELLER DISTORTED VACANCY IN SILICON [J].
LIPARI, NO ;
BERNHOLC, J ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1979, 43 (18) :1354-1357
[36]   CORRELATED DLTS AND ELECTRON-PARAMAGNETIC-RES MEASUREMENTS OF DEFECTS IN AS-GROWN AND ELECTRON-IRRADIATED P-TYPE GAP [J].
MOONEY, PM ;
KENNEDY, TA ;
SMALL, MB .
PHYSICA B & C, 1983, 116 (1-3) :431-435
[37]  
MOONEY PM, UNPUB
[38]   OPTICAL ABSORPTION DUE TO EXCITATION OF ELECTRONS BOUND TO SI AND S IN GAP [J].
ONTON, A .
PHYSICAL REVIEW, 1969, 186 (03) :786-&
[39]  
PANTELIDES ST, 1981, B AM PHYS SOC, V26, P255
[40]  
POLLMANN J, 1980, FESTKORPERPROBLEME, V20, P117