ELECTRONIC-STRUCTURE OF DEEP SP-BONDED SUBSTITUTIONAL IMPURITIES IN SILICON

被引：56

作者：

BERNHOLC, J ^{[1
]}

LIPARI, NO ^{[1
]}

PANTELIDES, ST ^{[1
]}

SCHEFFLER, M ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.26.5706

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：5706 / 5715

页数：10

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