LINEAR ELECTROOPTIC EFFECT IN GEXSI1-X SI STRAINED-LAYER SUPERLATTICES

被引：5

作者：

FRIEDMAN, L ^{[1
]}

SOREF, RA ^{[1
]}

机构：

[1] USAF,ROME AIR DEV CTR,DIV SOLID STATE SCI,BEDFORD,MA 01731

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 15期

关键词：

D O I：

10.1049/el:19860562

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：819 / 821

页数：3

共 11 条

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APPLIED PHYSICS LETTERS, 1985, 47 (12) :1333-1335

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BEAN, JC .

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[5]

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[6]

OURMAZD A, 1985, FAL P MRS M

[7] BAND ALIGNMENTS OF COHERENTLY STRAINED GEXSI1-X/SI HETEROSTRUCTURES ON LESS-THAN-001-GREATER-THAN GEYSI1-Y SUBSTRATES [J].

PEOPLE, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :538-540

[8] Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components [J].

Soref, R. A. ;

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ELECTRONICS LETTERS, 2009, :26-27

[9]

SOREF RA, 1986, IEEE J LIGHTWAVE JUN

[10]

SOREF RA, 1986, FEB OFC IGWO ATL

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