KINETICS OF DAMAGE PRODUCTION IN SILICON DURING SELF-IMPLANTATION

被引：45

作者：

MASZARA, WP ^{[1
]}

ROZGONYI, GA ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MECH ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 07期

关键词：

D O I：

10.1063/1.337140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2310 / 2315

页数：6

共 18 条

[1]

Baranova E. C., 1973, Radiation Effects, V18, P21, DOI 10.1080/00337577308234712

[2] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[3] ION-INDUCED DEFECTS IN SEMICONDUCTORS [J].

CORBETT, JW ;

KARINS, JP ;

TAN, TY .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :457-476

[4] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL [J].

DENNIS, JR ;

HALE, EB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1119-1127

[5]

DENNIS JR, 1975, I PHYS C SER, V23, P467

[6]

Gusev V. M., 1972, Radiation Effects, V15, P251, DOI 10.1080/00337577208234700

[7] ION-BEAM PROCESSES IN SI [J].

HOLLAND, OW ;

NARAYAN, J ;

FATHY, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :243-250

[8]

HOLLAND OW, 1985, MATER RES SOC P, V41, P307

[9] FEATURES OF COLLISION CASCADES IN SILICON AS DETERMINED BY TRANSMISSION ELECTRON-MICROSCOPY [J].

HOWE, LM ;

RAINVILLE, MH .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :143-151

[10]

MASZARA W, 1985, MATER RES SOC S P, V35, P277

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