OPTICAL-DETECTION OF MISFIT DISLOCATION-INDUCED DEEP LEVELS AT INGAAS/GAAS HETEROJUNCTIONS

被引：22

作者：

RAISANEN, A ^{[1
]}

BRILLSON, LJ ^{[1
]}

GOLDMAN, RS ^{[1
]}

KAVANAGH, KL ^{[1
]}

WIEDER, HH ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,DEPT ELECT ENGN & COMP ENGN,LA JOLLA,CA 92093

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 26期

关键词：

D O I：

10.1063/1.111201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using variable-depth luminescence excitation probes, we have observed discrete emission at characteristic energies from deep electronic states associated with misfit dislocations at InGaAs/GaAs interfaces. These states are localized near the buried heterointerface within the InGaAs layer and exhibit only minor variations in energy with composition and strain. The dislocation-induced spectral features appear only in strain-relaxed InGaAs films and are uncorrelated with additional features due to native bulk defects.

引用

页码：3572 / 3574

页数：3

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