CATHODOLUMINESCENCE EVIDENCE OF THE RELATIVE POSITION OF AS(G) AND GA(G) DISLOCATION-RELATED ENERGY-BANDS IN GALLIUM-ARSENIDE

被引：10

作者：

SIEBER, B

FARVACQUE, JL

MIRI, A

机构：

[1] Laboratoire de Structure Et Propriétyés de L'etat Solide, U.A. C.N.R.S. N° 234, Université Des Sciences Et Technologies de Lille, Villeneuve D'ascq

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1993年 / 138卷 / 02期

关键词：

D O I：

10.1002/pssa.2211380238

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cathodoluminescence contrast experiments are performed in the range 87 to 350 K on As(g) and Ga(g) dislocations introduced by means of microhardness indentations in p-type bulk gallium arsenide. The experimental results are interpreted by a model which assumes the recombination properties of the dislocation to be the results of the dislocation radial electrical field. It is found, in agreement with previous EBIC contrast studies of dislocations in n-type GaAs, that the energy band related to the As(g) dislocation is closer to the top of the valence band than that related to the Ga(g) dislocation.

引用

页码：673 / 680

页数：8

共 32 条

[1] EBIC INVESTIGATION OF THE ELECTRICAL-ACTIVITY OF DISLOCATIONS WITH DIFFERENT IMPURITY ATMOSPHERES IN SI [J].

BONDARENKO, IE ;

YAKIMOV, EB .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 122 (01) :121-128

[2] OBSERVATION OF 1.13 EV POLARIZED LUMINESCENCE BAND IN PLASTICALLY DEFORMED GAAS [J].

DEPRAETERE, E ;

VIGNAUD, D ;

FARVACQUE, JL .

SOLID STATE COMMUNICATIONS, 1987, 64 (12) :1465-1468

[3] A THEORETICAL-STUDY OF THE CHARGE COLLECTION CONTRAST OF LOCALIZED SEMICONDUCTOR DEFECTS WITH ARBITRARY RECOMBINATION ACTIVITY [J].

DONOLATO, C .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (01) :37-43

[4]

DONOLATO C, 1978, OPTIK, V52, P19

[5] CONTRAST AND RESOLUTION OF SEM CHARGE-COLLECTION IMAGES OF DISLOCATIONS [J].

DONOLATO, C .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :80-81

[6] NUMERICAL-ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF EBIC AND CL CONTRASTS [J].

ECKSTEIN, M ;

HABERMEIER, HU .

JOURNAL DE PHYSIQUE IV, 1991, 1 (C6) :23-28

[7] EBIC CONTRAST THEORY OF DISLOCATIONS - INTRINSIC RECOMBINATION PROPERTIES [J].

FARVACQUE, JL ;

SIEBER, B .

REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (04) :353-359

[8]

FARVACQUE JL, 1989, I PHYS C SER, V104, P141

[9] GALVANOMAGNETIC PROPERTIES OF DISLOCATIONS IN GAAS [J].

FERRE, D ;

FARVACQUE, JL .

REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (04) :323-332

[10] ELECTRON-BEAM INDUCED CURRENT VERSUS TEMPERATURE INVESTIGATIONS OF LOCALIZED DISLOCATIONS IN HEAT-TREATED CZOCHRALSKI SILICON [J].

JAKUBOWICZ, A ;

HABERMEIER, HU ;

EISENBEISS, A ;

KASS, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 104 (02) :635-641

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