CATHODOLUMINESCENCE EVIDENCE OF THE RELATIVE POSITION OF AS(G) AND GA(G) DISLOCATION-RELATED ENERGY-BANDS IN GALLIUM-ARSENIDE

被引：10

作者：

SIEBER, B

FARVACQUE, JL

MIRI, A

机构：

[1] Laboratoire de Structure Et Propriétyés de L'etat Solide, U.A. C.N.R.S. N° 234, Université Des Sciences Et Technologies de Lille, Villeneuve D'ascq

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1993年 / 138卷 / 02期

关键词：

D O I：

10.1002/pssa.2211380238

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cathodoluminescence contrast experiments are performed in the range 87 to 350 K on As(g) and Ga(g) dislocations introduced by means of microhardness indentations in p-type bulk gallium arsenide. The experimental results are interpreted by a model which assumes the recombination properties of the dislocation to be the results of the dislocation radial electrical field. It is found, in agreement with previous EBIC contrast studies of dislocations in n-type GaAs, that the energy band related to the As(g) dislocation is closer to the top of the valence band than that related to the Ga(g) dislocation.

引用

页码：673 / 680

页数：8

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