EBIC CONTRAST OF DEFECTS IN CADMIUM TELLURIDE .1. EXPERIMENTS

被引:7
作者
SIEBER, B [1 ]
PHILIBERT, J [1 ]
机构
[1] CNRS,PHYS MAT LAB,F-92190 MEUDON,FRANCE
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 55卷 / 05期
关键词
D O I
10.1080/13642818708218345
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:575 / 583
页数:9
相关论文
共 41 条
[1]   ELECTRON BEAM-INDUCED CURRENT IN DIRECT BAND-GAP SEMICONDUCTORS [J].
AKAMATSU, B ;
HENOC, J ;
HENOC, P .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7245-7250
[3]   IMPROVED SPATIAL-RESOLUTION DIFFUSION LENGTH MEASUREMENTS IN IMPERFECT SILICON [J].
BELL, RO ;
HANOKA, JI .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1741-1744
[4]   COMBINED SCANNING (EBIC) AND TRANSMISSION ELECTRON-MICROSCOPIC INVESTIGATIONS OF DISLOCATIONS IN SEMICONDUCTORS [J].
BLUMTRITT, H ;
GLEICHMANN, R ;
HEYDENREICH, J ;
JOHANSEN, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02) :611-620
[5]  
BOOKER GR, 1981, I PHYS C SER, V60, P203
[6]  
BRESSE JF, 1972, 5TH P ANN SEM S, P105
[7]  
BRION HG, 1984, 13TH P INT C DEF SEM, P381
[8]   DETERMINATION OF BULK DIFFUSION LENGTH IN THIN SEMICONDUCTOR LAYERS BY SEM-EBIC [J].
DIMITRIADIS, CA .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (12) :2269-2274
[9]   ELECTRON-BEAM-INDUCED CURRENT MEASUREMENTS - COMPARISON OF BARRIER-BEAM PARALLEL AND PERPENDICULAR GEOMETRIES [J].
DIXON, AE ;
WILLIAMS, DF ;
DAS, SR ;
WEBB, JB .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2963-2966
[10]   INFLUENCE OF THE GENERATION DISTRIBUTION ON THE CALCULATED EBIC CONTRAST OF LINE DEFECTS [J].
DONOLATO, C ;
VENTURI, P .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (02) :377-387