ELECTRON-BEAM-INDUCED CURRENT MEASUREMENTS - COMPARISON OF BARRIER-BEAM PARALLEL AND PERPENDICULAR GEOMETRIES

被引:7
作者
DIXON, AE [1 ]
WILLIAMS, DF [1 ]
DAS, SR [1 ]
WEBB, JB [1 ]
机构
[1] NATL RES COUNCIL CANADA,DIV CHEM,SEMICOND GRP,OTTAWA K1A 0R6,ONTARIO,CANADA
关键词
D O I
10.1063/1.335240
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2963 / 2966
页数:4
相关论文
共 7 条
[1]   SIMPLE TECHNIQUE TO OBTAIN A POSITION MODULATED SCAN IN SCANNING ELECTRON-MICROSCOPES [J].
DIXON, AE ;
WILLIAMS, DF .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1984, 55 (06) :922-924
[2]   ANALYSIS OF EBIC CONSIDERING THE GENERATION DISTRIBUTION OF MINORITY-CARRIERS [J].
FUYUKI, T ;
MATSUNAMI, H ;
TANAKA, T .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (08) :1503-1510
[3]   DIFFUSION LENGTH EVALUATION OF BORON-IMPLANTED SILICON USING THE SEM-EBIC-SCHOTTKY DIODE TECHNIQUE [J].
IOANNOU, DE ;
DAVIDSON, SM .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (08) :1339-1344
[4]   A SEM-EBIC MINORITY-CARRIER DIFFUSION-LENGTH MEASUREMENT TECHNIQUE [J].
IOANNOU, DE ;
DIMITRIADIS, CA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) :445-450
[5]  
LEEDY KO, 1977, SOLID STATE TECHNOL, V20, P45
[6]  
SHEA SP, 1978, SCANNING ELECTRON MI, V1, P435
[7]  
VANOPDORP C, 1977, PHILIPS RES REP, V32, P192